国产精品久久久久久

我国(guo)在(zai)“十(shi)三五”新能(neng)(neng)(neng)源汽(qi)车(che)试点专项的(de)共性(xing)(xing)关(guan)(guan)键技(ji)(ji)术(shu)(shu)类研究项目(mu)(mu)“高比能(neng)(neng)(neng)量(liang)锂离(li)子电(dian)(dian)(dian)池(chi)技(ji)(ji)术(shu)(shu)”中(zhong)提(ti)出(chu)：到 2020年，电(dian)(dian)(dian)池(chi)单体能(neng)(neng)(neng)量(liang)密度(du)≥300 Wh/kg，循(xun)环(huan)寿命(ming)≥1500 次，成(cheng)(cheng)本(ben)≤0.8 元/Wh，安全(quan)性(xing)(xing)能(neng)(neng)(neng)达(da)到国(guo)标(biao)要求(qiu)。工信部发布的(de)《中(zhong)国(guo)制造2025》中(zhong)，2020年动力(li)锂离(li)子电(dian)(dian)(dian)池(chi)电(dian)(dian)(dian)芯(xin)能(neng)(neng)(neng)量(liang)密度(du)期望达(da)到350Wh/kg。实现上(shang)述目(mu)(mu)标(biao)的(de)关(guan)(guan)键技(ji)(ji)术(shu)(shu)之一(yi)是负极(ji)(ji)材(cai)(cai)(cai)料从石(shi)墨转变(bian)(bian)为(wei)硅(gui)(gui)基材(cai)(cai)(cai)料。硅(gui)(gui)具(ju)有最高的(de)理论嵌锂容(rong)(rong)(rong)量(liang)（4200 mAh/g, 对应(ying)(ying)(ying)Li22Si5相 ），脱锂电(dian)(dian)(dian)位低（低于1.0V vs. Li+/Li），丰(feng)富的(de)资源，较(jiao)好的(de)倍率(lv)特性(xing)(xing)，很早就开始(shi)获得关(guan)(guan)注。硅(gui)(gui)嵌锂后形(xing)成(cheng)(cheng)锂硅(gui)(gui)合(he)金(jin)，体积逐渐膨(peng)胀，体积变(bian)(bian)化(hua)(hua)与(yu)可(ke)逆(ni)容(rong)(rong)(rong)量(liang)成(cheng)(cheng)正比，4200mAh/g对应(ying)(ying)(ying)的(de)理论体积变(bian)(bian)化(hua)(hua)为(wei)320%，而实际电(dian)(dian)(dian)芯(xin)一(yi)般要求(qiu)全(quan)生命(ming)周期膨(peng)胀率(lv)小于10%，甚至5%。因此(ci)硅(gui)(gui)负极(ji)(ji)实际容(rong)(rong)(rong)量(liang)受到电(dian)(dian)(dian)芯(xin)最大允(yun)许(xu)体积膨(peng)胀的(de)制约。此(ci)外(wai)，大的(de)体积变(bian)(bian)化(hua)(hua)导致颗粒容(rong)(rong)(rong)易粉(fen)化(hua)(hua)，极(ji)(ji)片容(rong)(rong)(rong)易从集流体脱落。暴露在(zai)电(dian)(dian)(dian)解液中(zhong)的(de)硅(gui)(gui)负极(ji)(ji)表面还不容(rong)(rong)(rong)易形(xing)成(cheng)(cheng)稳定(ding)的(de)表面钝化(hua)(hua)膜（SEI），导致电(dian)(dian)(dian)池(chi)首周及每周库仑(lun)效率(lv)较(jiao)低，全(quan)电(dian)(dian)(dian)池(chi)循(xun)环(huan)性(xing)(xing)能(neng)(neng)(neng)较(jiao)差。为(wei)了(le)解决这(zhei)些(xie)难(nan)题，在(zai)过(guo)去20年提(ti)出(chu)了(le)多种技(ji)(ji)术(shu)(shu)解决手段，目(mu)(mu)前复合(he)材(cai)(cai)(cai)料的(de)可(ke)逆(ni)容(rong)(rong)(rong)量(liang)在(zai)450mAh/g以下(xia)的(de)碳包覆(fu)氧(yang)化(hua)(hua)亚硅(gui)(gui)、碳包覆(fu)纳米硅(gui)(gui)碳复合(he)材(cai)(cai)(cai)料在(zai)循(xun)环(huan)性(xing)(xing)、倍率(lv)特性(xing)(xing)方面基本(ben)能(neng)(neng)(neng)满足应(ying)(ying)(ying)用要求(qiu)，已(yi)开始(shi)小批量(liang)进入电(dian)(dian)(dian)动工具(ju)等市场。但450mAh/g以上(shang)的(de)硅(gui)(gui)基负极(ji)(ji)材(cai)(cai)(cai)料应(ying)(ying)(ying)用还有很多技(ji)(ji)术(shu)(shu)挑战。高容(rong)(rong)(rong)量(liang)硅(gui)(gui)基负极(ji)(ji)材(cai)(cai)(cai)料能(neng)(neng)(neng)否显著提(ti)升锂离(li)子电(dian)(dian)(dian)池(chi)的(de)体积能(neng)(neng)(neng)量(liang)密度(du)和质(zhi)量(liang)能(neng)(neng)(neng)量(liang)密度(du)，满足各(ge)类应(ying)(ying)(ying)用的(de)综合(he)技(ji)(ji)术(shu)(shu)指标(biao)，突(tu)破关(guan)(guan)键工程放大技(ji)(ji)术(shu)(shu)，技(ji)(ji)术(shu)(shu)经济性(xing)(xing)超越石(shi)墨类负极(ji)(ji)，是实现我国(guo)新能(neng)(neng)(neng)源汽(qi)车(che)动力(li)电(dian)(dian)(dian)池(chi)以及多个应(ying)(ying)(ying)用领域技(ji)(ji)术(shu)(shu)腾(teng)飞(fei)的(de)关(guan)(guan)键。

有鉴于硅(gui)(gui)基负(fu)(fu)极(ji)(ji)材(cai)(cai)料(liao)(liao)的(de)(de)(de)(de)(de)发(fa)展对于推动我(wo)国下(xia)(xia)一代高能(neng)量密(mi)度(du)锂离子(zi)电(dian)池技(ji)(ji)术(shu)的(de)(de)(de)(de)(de)进步(bu)，提升相(xiang)关企业(ye)核心(xin)竞争力具有十分重要的(de)(de)(de)(de)(de)意义，我(wo)们特(te)别组织本次会议，讨论和(he)交(jiao)流硅(gui)(gui)基负(fu)(fu)极(ji)(ji)材(cai)(cai)料(liao)(liao)中的(de)(de)(de)(de)(de)基础科学(xue)问(wen)题(ti)，纳(na)米(mi)硅(gui)(gui)、氧化(hua)亚硅(gui)(gui)及(ji)其它形式的(de)(de)(de)(de)(de)硅(gui)(gui)前(qian)(qian)躯体，不同(tong)微观结构和(he)组成的(de)(de)(de)(de)(de)硅(gui)(gui)基负(fu)(fu)极(ji)(ji)材(cai)(cai)料(liao)(liao)，前(qian)(qian)躯体及(ji)复(fu)合(he)材(cai)(cai)料(liao)(liao)的(de)(de)(de)(de)(de)高水平制(zhi)造(zao)技(ji)(ji)术(shu)与制(zhi)造(zao)装备，硅(gui)(gui)负(fu)(fu)极(ji)(ji)应用匹配的(de)(de)(de)(de)(de)电(dian)解(jie)液、导(dao)电(dian)添加剂、粘接剂、复(fu)合(he)石墨负(fu)(fu)极(ji)(ji)材(cai)(cai)料(liao)(liao)、各类正极(ji)(ji)材(cai)(cai)料(liao)(liao)，高能(neng)量密(mi)度(du)电(dian)芯的(de)(de)(de)(de)(de)设计、制(zhi)造(zao)、化(hua)成工(gong)艺、电(dian)化(hua)学(xue)性(xing)能(neng)、安全性(xing)能(neng)，硅(gui)(gui)负(fu)(fu)极(ji)(ji)材(cai)(cai)料(liao)(liao)及(ji)电(dian)芯的(de)(de)(de)(de)(de)测(ce)试方法(fa)和(he)测(ce)试标准，目前(qian)(qian)采用硅(gui)(gui)负(fu)(fu)极(ji)(ji)材(cai)(cai)料(liao)(liao)的(de)(de)(de)(de)(de)锂离子(zi)电(dian)池的(de)(de)(de)(de)(de)各项技(ji)(ji)术(shu)指(zhi)标达(da)到的(de)(de)(de)(de)(de)水平和(he)未来可能(neng)的(de)(de)(de)(de)(de)极(ji)(ji)限(xian)等(deng)问(wen)题(ti)。本次研讨会，将诚挚邀请硅(gui)(gui)基负(fu)(fu)极(ji)(ji)材(cai)(cai)料(liao)(liao)上下(xia)(xia)游(you)的(de)(de)(de)(de)(de)专家学(xue)者、研究(jiu)生(sheng)、工(gong)程(cheng)技(ji)(ji)术(shu)人员等(deng)共(gong)聚一堂、充分交(jiao)流、集(ji)思广益、相(xiang)互切磋，以期实质性(xing)促进我(wo)国硅(gui)(gui)负(fu)(fu)极(ji)(ji)材(cai)(cai)料(liao)(liao)的(de)(de)(de)(de)(de)研发(fa)和(he)产(chan)业(ye)化(hua)。